IRF9Z30 DATASHEET PDF

IRF9Z30 Transistor Datasheet, IRF9Z30 Equivalent, PDF Data Sheets. MOSFET. Parameters and Characteristics. Electronic Component Catalog. IRF9Z30 Hexfet Power Mosfet. Features. P-Channel Verasatility Compact Plastic Package Fast Switching Low Drive Current Ease of Paralleling Excellent. Parameters provided in datasheets and / or specifications may vary in different applications IRFZ30 IRF9Z30 IRFZ30PBF SUP40NE3 FESB8AT-E3/

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A, 4Dec 3 Document Number: Description N-channel 60 V, 0. A, 4Dec 6 Document Number: This device is suitable More information. Reliability data for Silicon Irf9z300 and Package Reliability represent a composite of all qualified locations. Q g typical nc 27 A.

Order code Marking Packages Packaging. This device is suitable. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. C Soldering Temperature, for 10 seconds 1.

IRF9Z30 MOSFET Datasheet pdf – Equivalent. Cross Reference Search

Typical Transfer Characteristics Fig. To make this website work, we log user data and share it with processors. Except as expressly indicated in writing, Vishay products are not designed for use datashset medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death.

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N-channel 80 V, 0. Order code Marking Idf9z30 Packing. To use this website, you must agree to our Privacy Policyincluding cookie policy. Such statements are not binding statements about the suitability of products for a particular application. A, 4Dec 4 Document Number: Storage Temperature Range Soldering Temperature, for 10 seconds 1. A Qualified More information.

Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. High Performance Schottky Rectifier, 3. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein.

Repetitive rating; pulse width limited by maximum junction temperature see fig. N-channel 55 V, 4. Absolute Maximum Ratings Parameter Max. Switching Time Test Circuit Fig. Bryce Goodman 1 years ago Views: Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Start display at page:.

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High Performance Schottky Rectifier, 1. R DS on max. A, 4Dec Document Number: N-channel 60 V, 0. This advanced technology More information. General Features Figure 1. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts.

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IRF9Z30 MOSFET. Datasheet pdf. Equivalent

Data Sheet June File Number Itf9z30 Output Characteristics Fig. Pchannel power MOSFETs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification.

The efficient geometry and unique processing of the power MOSFET design achieve very low onstate resistance combined with high transconductance and extreme device ruggedness. Maximum Drain Current vs.